Cash capital increase of NT$17,000,000 and employee stock option certificate share exchange of NT$16,010,000 to increase the paid-in capital to NT$204,170,000.
Collaborated with the Nantong Institute of Nanjing University of Posts and Telecommunications to jointly cultivate talents.
Offered ISO 26262 functional safety requirements for automotive chips.
Launched START v2 to support the new generation of 5G technology.
Collaborated with Chung Hwa University to set up laboratories for talent cultivation.
Public offering of shares was approved.
Listing on the emerging stock market was approved.
2019
Renamed as “iSTART-TEK Incs.
Launched the lite-version memory test solution, EZ-BIST.
Offered memory testing algorithms for automotive chips.
Cash capital increase of NT$50,000,000 and employee stock option certificate share exchange of NT$10,580,000 to increase the paid-in capital to NT$171,160,000.
2018
Offered SRAM solution-START that combines inspection and repair.
Won the Golden Torch Award.
Employee stock option certificate share exchange of NT$2,520,000 to increase the paid-in capital to NT$110,580,000.
2017
Moved to Tai Yuen Hi-Tech Industrial Park.
Launched real-time non-volatile memory test and repair solutions.
Announced the new memory testing circuit development environment, BRAINS 3.0.
Cash capital increase of NT$55,000,000 to increase the paid-in capital to NT$108,060,000.
2016
Won the Golden Peak Award of Outstanding Enterprise and Outstanding Enterprise Initiators.
Announced the accumulative memory repairing technology H.E.A.R.T.
Cash capital increase of NT$13,560,000, debt to capital increase of NT$21,500,000, and capital reduction to cover loss of NT$10,116,000 to increase the paid-in capital to NT$53,060,000.
Obtained the U. S. Patent: “Algorithm Integrating System and Integrating Method Thereof”.
2013
Obtained the U. S. and Taiwan Patent: “Method for Repairing Memory and System Thereof” via technology transfer authorization from National Tsing Hua University.
Obtained the U. S. and Taiwan Patent: “Built-In Self-Repair Method for NAND Flash Memory and System Thereof” via technology transfer authorization from National Tsing Hua University.
Cash capital increase of NT$8,086,000 and debt-to-capital increase of NT$230,000 to increase the paid-in capital to NT$28,116,000.
2012
Cash capital increase of NT$8,222,000 and debt-to-capital increase of NT$3,278,000 to increase the paid-in capital to NT$19,800,000.
Obtained the U. S. Patent: “Hybrid Self-Test Circuit Structure”.
2009
Company establishment was approved with paid-in capital of NT$8,300,000.
