Certified with the ISO 26262 Automotive Functional Safety Engineer (PFSEA).
Obtains Taiwan Patent “Configurable ATE Tool Flow”.
Provide EZ-Monitor SRAM BIST IP.
Provide EZ-TEC SRAM BIST IP.
Provide EZ-Safety SRAM BIST IP.
Provide eFlash BIST IP.
Provided SONOS eFlash IP.
Obtained the Chinese patent for “Memory Repair Circuit, Memory Module, and Memory Repair Method.”
2023
Obtains U.S. Patent “METHOD FOR GENERATINGAN MEMORY BUILT-IN SELF-TEST ALGORITHM CIRCUIT”.
Provide iSTART-Cloud.
Certified with the Quality Management: ISO 9001:2015.
2022
Executed a buyback of 500,000 shares of treasury stock.
Launched START v3 to target the automotive electronics market.
Established subsidiary “Shanghai iSTART-TEK Limited” in mainland China.
Secured Taiwan patent for ” METHOD FOR GENERATING AN MEMORY BUILT-IN SELF-TEST ALGORITHM CIRCUIT”.
Conducted a cash capital increase of NT$30,000 thousand, increasing paid-in capital to NT$254,170 thousand.
2021
Obtained approval as a Technology Based Enterprise.
2020
Cash capital increase of NT$17,000,000 and employee stock option certificate share exchange of NT$16,010,000 to increase the paid-in capital to NT$204,170,000.
Collaborated with the Nantong Institute of Nanjing University of Posts and Telecommunications to jointly cultivate talents.
Offered ISO 26262 functional safety requirements for automotive chips.
Launched START v2 to support the new generation of 5G technology.
Collaborated with Chung Hwa University to set up laboratories for talent cultivation.
Public offering of shares was approved.
Listing on the emerging stock market was approved.
2019
Renamed as “iSTART-TEK INC.”
Launched the lite-version memory test solution, EZ-BIST.
Offered memory testing algorithms for automotive chips.
Cash capital increase of NT$50,000,000 and employee stock option certificate share exchange of NT$10,580,000 to increase the paid-in capital to NT$171,160,000.
2018
Offered SRAM solution-START that combines inspection and repair.
Won the Golden Torch Award.
Employee stock option certificate share exchange of NT$2,520,000 to increase the paid-in capital to NT$110,580,000.
2017
Moved to Tai Yuen Hi-Tech Industrial Park.
Launched real-time non-volatile memory test and repair solutions.
Announced the new memory testing circuit development environment, BRAINS 3.0.
Cash capital increase of NT$55,000,000 to increase the paid-in capital to NT$108,060,000.
2016
Won the Golden Peak Award of Outstanding Enterprise and Outstanding Enterprise Initiators.
Announced the accumulative memory repairing technology H.E.A.R.T.
Cash capital increase of NT$13,560,000, debt to capital increase of NT$21,500,000, and capital reduction to cover loss of NT$10,116,000 to increase the paid-in capital to NT$53,060,000.
Obtained the U. S. Patent: “Algorithm Integrating System and Integrating Method Thereof”.
2013
Obtained the U. S. and Taiwan Patent: “Method for Repairing Memory and System Thereof” via technology transfer authorization from National Tsing Hua University.
Obtained the U. S. and Taiwan Patent: “Built-In Self-Repair Method for NAND Flash Memory and System Thereof” via technology transfer authorization from National Tsing Hua University.
Cash capital increase of NT$8,086,000 and debt-to-capital increase of NT$230,000 to increase the paid-in capital to NT$28,116,000.
2012
Cash capital increase of NT$8,222,000 and debt-to-capital increase of NT$3,278,000 to increase the paid-in capital to NT$19,800,000.
Obtained the U. S. Patent: “Hybrid Self-Test Circuit Structure”.
2009
Company establishment was approved with paid-in capital of NT$8,300,000.
