iSTART-TEK has successfully obtained the Chinese patent for “Memory Repair Circuit, Memory Module, and Memory Repair Method” (Patent No: ZL 2019 1 1227376.5). This patent addresses the limitations of existing hardware and software repair techniques by enhancing repair efficiency, reducing time costs, and ensuring the proper functioning of electronic products. It includes components such as non-volatile and volatile memory units, controllers, self-test circuits, and repair information generation circuits.
The patented technology combines the advantages of both hardware and software repair methods, offering incremental repair capabilities. In applications requiring long-term use of electronic devices, this memory repair circuit and the associated memory module can fix newly emerged faulty memory units, overcoming the limitations of current repair techniques.